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ZNBG3010
ZNBG3011
SYMBOL PARAMETER
CONDITIONS
MIN.
LIMITS
TYP.
MAX.
UNITS
DRAIN CHARACTERISTICS
I D
Current
8
10
12
mA
Current Change
I DV
I DT
with V CC
with T j
V CC = 5 to 10V
T j =-40 to +70°C
0.2
0.05
%/V
%/°C
V D1
Drain 1 Voltage:High
ZNBG3010
ZNBG3011
I D1 =10mA, V POL =15.5V
I D1 =10mA, V POL =15.5V
2.0
1.8
2.2
2.0
2.4
2.2
V
V
V D2
Drain 2 Voltage:High
ZNBG3010
ZNBG3011
I D2 =10mA, V POL =14V
I D2 =10mA, V POL =14V
2.0
1.8
2.2
2.0
2.4
2.2
V
V
V D3
Drain 3 Voltage:High
ZNBG3010
ZNBG3011
I D3 =10mA, V POL =15.5V
I D3 =10mA, V POL =15.5V
2.0
1.8
2.2
2.0
2.4
2.2
V
V
Voltage Change
V DV
V DT
with V CC
with T j
V CC = 5 to 10V
T j =-40 to +70°C
0.5
50
%/V
ppm
Leakage Current
I L1
I L2
Drain 1
Drain 2
V D1 =0.1V, V POL =14V
V D2 =0.1V, V POL =15.5V
10
10
μ A
μ A
POLARITY SWITCH CHARACTERISTICS
I POL
V TPOL
Input Current
Threshold Voltage
V POL =25V
(Applied via R POL =10k ?
(Applied via R POL =10k ?
10
14
20
14.75
40
15.5
μ A
V
T SPOL
Switching Speed
100
μ s
Notes:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external
capacitors, C NB and C SUB , of 47nF are required for this purpose.
2. The characteristics are measured using an external reference resistor R CAL of value 33k wired from
pins R CAL to ground.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all
outputs. C G , 4.7nF, are connected between gate outputs and ground, C D , 10nF, are connected
between drain outputs and ground.
4-116
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